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2SD1898-R Datasheet(PDF) 1 Page - Micro Commercial Components |
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2SD1898-R Datasheet(HTML) 1 Page - Micro Commercial Components |
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1 / 2 page  2SD1898 -P NPN Silicon Power Transistors Features • High VCEO, VCEO=80V • High IC, IC=1.0A(DC) Maximum Ratings Symbol Rating Value Unit VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current, DC Pulse (1) 1.0 2.0 A PC Collector Power Dissipation (2) 0.5 2.0 W TJ Junction Temperature -55 to +150 OC TSTG Storage Temperature -55 to +150 OC Electrical Characteristics @ 25 °C Unless Otherwise Specified Symbol Parameter Min Typ Max Units OFF CHARACTERISTICS VCEO Collector-Emitter Breakdown Voltage (IC=1.0mAdc) 80 --- --- Vdc VCBO Collector-Base Breakdow n Voltage (IC=50uAdc) 100 --- --- Vdc VEBO Emitter-Base Breakdown Voltage (IE=50uAdc) 5.0 --- --- Vdc ICBO Collector Cutoff Current (VCB=80Vdc) --- --- 1.0 uAdc IEBO Emitter Cutoff Current (VEB=4.0Vdc, IC=0) --- --- 1.0 uAdc hFE DC Current Transfer Ratio (3) (VCE=3.0Vdc, IC=0.5Adc) 82 --- 390 --- VCE(sat) Collector-Emitter Saturation Voltage (IC/IB=500mA/20mA) --- 0.15 0.4 Vdc fT Transition Frequency (VCE=10Vdc, IE=50mAdc, f=100MHz) --- 100 --- MHz Cob Output Capacitance (VCB=10Vdc, IE=0, f=1.0MHz) --- 20 --- pF (1) Pw=20ms, duty=1/2 (2) When mounted on a 40x40x0.7mm ceramic board. (3) Measured using pulse current SOT-89 1. OUT 2. GND 3. IN Revision: A 20 11/01/01 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC TM Micro Commercial Components www.mccsemi.com 1 of 2 25 B A E D G H F K J C 1.55 .061 REF. 123 2SD1898 -Q 2SD1898 -R CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 Marking DF • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 |
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