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2SC2383-R Datasheet(PDF) 1 Page - Micro Commercial Components |
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2SC2383-R Datasheet(HTML) 1 Page - Micro Commercial Components |
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1 / 2 page ![]() NPN Silicon Plastic-Encapsulate Transistor TO-92MOD Features • Capable of 0.9Watts of Power Dissipation. • Collector-current 1.0A • Collector-base Voltage 160V • Operating and storage junction temperature range: -55 OC to +150OC OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC=10mAdc, IB=0) 160 Vdc V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) 160 Vdc V(BR)EBO Emitter-Base Voltage (IE=10uAdc, IC=0) 6.0 Vdc ICBO Collector Cutoff Current (VCB=150Vdc, IE=0) 1.0 uAdc ICER Collector Cutoff Current (VCB=150Vdc, REB=10m OHM) 10 uAdc IEBO Emitter Cutoff Current (VEB=6.0Vdc, IC=0) 1.0 uAdc ON CHARACTERISTICS hFE(1) DC Current Gain (IC=200mAdc, VCE=5.0Vdc) 60 320 VCE(sat) Collector-Emitter Saturation Voltage (IC=500mAdc, IB=50mAdc) 1.0 Vdc VBE Base-Emitter Voltage (IC=5.0mAdc, VCE=5.0Vdc) 0.75 Vdc SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (IC=200mAdc, VCE=5.0Vdc ) 20 MHz CLASSIFICATION OF HFE (1) Rank R O Y Range 60-120 100-200 160-320 A B C D E F G H DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A --- .030 --- .750 B --- .039 --- 1.00 C --- .031 --- .80 D --- .024 --- 0.60 E --- .201 --- 5.10 F .050 1.27 G .050 1.27 H .100 2.54 I .039 1.00 J --- .087 --- 2.20 K --- .024 --- .60 L --- .323 --- 8.20 M --- .413 --- 10.50 N --- .161 --- 4.10 Revision: 5 2008/02/01 omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC 1 2 3 1.E 3.B 2.C TM Micro Commercial Components www.mccsemi.com 1 of 2 2SC2383-R 2SC2383-O 2SC2383-Y Electrical Characteristics @ 25 OC Unless Otherwise Specified Symbol Parameter Min Max Units • Marking: C2383 • Case Material:Molded Plastic. UL Flammability Classificatio Rating 94-0 and MSL Rating 1 • Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) |
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