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2SA1013-R Datasheet(PDF) 1 Page - Micro Commercial Components |
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2SA1013-R Datasheet(HTML) 1 Page - Micro Commercial Components |
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1 / 2 page  2SA1013-O PNP Epitaxial Silicon Transistor Features • Capable of 0.9Watts of Power Dissipation. • Collector-current -1.0A • Collector-base Voltage -160V • Operating and storage junction temperature range: -55 to +150 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage (IC=-1.0mAdc, IB=0) -160 --- Vdc V(BR)CBO Collector-Base Breakdown Voltage (IC=-100uAdc, IE=0) -160 --- Vdc V(BR)EBO Emitter-Base Breakdown Voltage (IE=-10mAdc, IC=0) -6.0 --- Vdc ICBO Collector Cutoff Current (VCB=-150Vdc, IE=0) --- -1.0 uAdc ICEO Collector Cutoff Current (VCB=-120Vdc, IE=0) --- -10 uAdc IEBO Emitter Cutoff Current (VEB=-6.0Vdc, IC=0) --- -1.0 uAdc ON CHARACTERISTICS hFE(1) DC Current Gain (IC=-200mAdc, VCE=-5.0Vdc) 65 310 --- hFE(2) DC Current Gain (IC=-50mAdc, VCE=-5.0Vdc) 40 --- --- VCE(sat) Collector-Emitter Saturation Voltage (IC=-500mAdc, IB=-50mAdc) --- -1.5 Vdc VBE Base-Emitter Saturation Voltage (IC=-5.0mAdc, VCE=-5.0Vdc) --- -0.75 Vdc SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (IC=-200mAdc, VCE=-5.0Vdc, f=30MHz) -15 --- MHz CLASSIFICATION OF HFE(1) Rank R O Y Range 60-120 120-200 200-300 TO-92MOD A B C D E F G H DIMENSIONS INCHES MM DIM MIN MAX MIN MAX NOTE A --- .030 --- .750 B --- .039 --- 1.00 C --- .031 --- .80 D --- .024 --- 0.60 E --- .201 --- 5.10 F .050 1.27 G .050 1.27 H .100 2.54 I .039 1.00 J --- .087 --- 2.20 K --- .024 --- .60 L --- .323 --- 8.20 M --- .413 --- 10.50 N --- .161 --- 4.10 123 1. EMITTER 2. COLLECTOR 3. BASE omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: 4 200 8/02/01 TM Micro Commercial Components www.mccsemi.com 1 of 2 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL rating 1 2SA1013-Y 2SA1013-R • Lead Free Finish/Rohs Compliant ("P"Suffix designates Compliant. See ordering information) |
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