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MSiCSS10060 Datasheet(PDF) 1 Page - Microsemi Corporation |
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MSiCSS10060 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 4 page  PRELIMINARY TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com SILICON CARBIDE SCHOTTKY POWER RECTIFIER T4-LDS-0109 Rev. 1 (091991) Page 1 of 4 DEVICES MSiCSN10060 MSiCSS10060 MSiCST10060 10A / 600V Silicon Carbide Schottky Rectifier ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) MSiCST10060 TO-39 MSiCSN10060 TO-257 MSiCSS10060 U-4 (SURFACE MOUNT: SMD.22) Parameters / Test Conditions Symbol Value Unit Peak Repetitive Reverse Voltage VRWM 600 V Surge Peak Reverse Voltage VRSM 600 V DC Blocking Voltage VDC 600 V Average Forward Current, 25°C Io 10 Apk Peak Surge Forward Current @ tp = 8.3ms, half sinewave, Io = 0; VRM = 0 IFSM 50 Apk Thermal Resistance, Junction to Case Rθjc °C/W Thermal Resistance, Junction to Ambient Rθja °C/W Operating Junction Temperature Tj -65°C to +225 °C Storage Temperature Tstg -65°C to +225 °C ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit Forward Voltage* IF = 1A, Tj = 25°C IF = 2.5A, Tj = 25°C IF = 5.0A, Tj = 25°C IF = 10.0A, Tj = 25°C VF 1.0 1.2 1.4 1.8 V Reverse Current VR = 600V, Tj = 25°C VR = 600V, Tj = 175°C IR 50 100 µA Junction Capacitance VR = 0V f = 1MHz Cj 550 pF * Pulse test: Pulse width 300 µsec, Duty cycle 2% Note: 1. Derate linearly @ tbd |
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