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MSiCSS05120 Datasheet(PDF) 1 Page - Microsemi Corporation |
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MSiCSS05120 Datasheet(HTML) 1 Page - Microsemi Corporation |
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1 / 5 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com SILICON CARBIDE SCHOTTKY POWER RECTIFIER T4-LDS-0104 Rev. 2 (110340) Page 1 of 5 DEVICES MSiCSN05120 MSiCSS05120 MSiCST05120 5A / 1200V MSiCSX05120 Silicon Carbide Schottky Rectifier ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Peak Repetitive Reverse Voltage VRWM 1200 V Surge Peak Reverse Voltage VRSM 1200 V DC Blocking Voltage VDC 1200 V Average Forward Current, 25°C Io 5 Apk Peak Surge Forward Current @ tp = 8.3ms, half sinewave, Io = 0; VRM = 0 IFSM 30 Apk Thermal Resistance, Junction to Case Rθjc °C/W Thermal Resistance, Junction to Ambient Rθja °C/W Operating Junction Temperature Tj -65°C to +225 °C Storage Temperature Tstg -65°C to +225 °C Note 1: Derate linearly @ tbd ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Max. Unit OFF CHARACTERTICS Forward Voltage IF = 1A, Tj = 25°C* IF = 2.5A, Tj = 25°C* IF = 5.0A, Tj = 25°C* VF 1.2 1.6 1.8 V Reverse Current VR = 1200V, Tj = 25°C VR = 1200V, Tj = 175°C IR 50 100 µA Junction Capacitance VR = 0V f = 1MHz Cj 500 pF * Pulse test: Pulse width 300 µsec, Duty cycle 2% MSiCST05120 TO-39 MSiCSN05120 TO-257 MSiCSS05120 U-4 (SURFACE MOUNT: SMD.22) MSiCSX05120 TO-257 (Tabless) |
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