IXFP7N80PM datasheet(2/4 Pages) IXYS

2 / 4 page

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFP7N80PM

Symbol

Test Conditions

Characteristic Values

J = 25°C, unless otherwise specified)

Min.

Typ.

Max.

DS= 20 V; ID = 3.5 A, Note 1

9.5

iss

1890

oss

GS = 0 V, VDS = 25 V, f = 1 MHz

133

rss

d(on)

GS = 10 V, VDS = 0.5 VDSS, ID = 4 A

d(off)

G = 10 Ω (External)

g(on)

GS= 10 V, VDS = 0.5 VDSS, ID = 6 A

9nC

thJC

2.5

°C/W

Source-Drain Diode

Characteristic Values

J = 25°C unless otherwise specified)

Symbol

Test Conditions

Min.

Typ.

Max.

GS = 0 V

Repetitive

F = IS, VGS = 0 V, Note 1

1.5

F = 7 A, -di/dt = 100 A/μs,

250

R = 100 V, VGS = 0 V

0.3

μC

Notes:

1) Pulse test, t

≤ 300 μs, duty cycle d ≤ 2 %

Terminals:

1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

ISOLATED TO-220 (IXFP...M)

IXYS MOSFETs and IGBTs are covered by 4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2

6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

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