IXFN44N100Q3 datasheet(1/5 Pages) IXYS

Part #	IXFN44N100Q3

Description	HiperFET Power MOSFET Q3-Class

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

1000

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

1000

V

GSS

Continuous

±30

V

GSM

Transient

±40

V

I

D25

T

C = 25°C

38

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

110

A

I

A

T

C = 25°C

44

A

E

AS

T

C = 25°C4

J

dv/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

50

V/ns

P

D

T

C = 25°C

960

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

V

ISOL

50/60 Hz, RMS, t = 1minute

2500

V~

I

ISOL ≤ 1mA,

t = 1s

3000

V~

M

d

Mounting Torque for Base Plate

1.5/13

Nm/lb.in.

Terminal Connection Torque

1.3/11.5

Nm/lb.in.

Weight

30

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

1000

V

GS(th)

V

DS = VGS, ID = 8mA

3.5

6.5

V

I

GSS

V

GS = ±30V, VDS = 0V

±200 nA

I

DSS

V

DS = VDSS, VGS = 0V

50

μA

T

J = 125°C

3 mA

R

DS(on)

V

GS = 10V, ID = 22A, Note 1

220 m

Ω

HiperFETTM

Power MOSFET

Q3-Class

IXFN44N100Q3

V

DSS

=

1000V

I

D25

=

38A

R

DS(on) ≤

≤≤≤≤

220m

Ω

t

rr

≤≤≤≤≤

300ns

DS100306(03/11)

N-Channel Enhancement Mode

Fast Intrinsic Rectifier

Features

International Standard Package

Low Intrinsic Gate Resistance

miniBLOC with Aluminum Nitride

Isolation

Low Package Inductance

Fast Intrinsic Rectifier

Low R

DS(on) and QG

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

DC Choppers

Temperature and Lighting Controls

Advance Technical Information

miniBLOC

E153432

G

D

S

G = Gate

D = Drain

S = Source

Either Source Terminal S can be used as

the Source Terminal or the Kelvin Source

(Gate Return) Terminal.

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