2SD1060

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-023.C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector to Base Voltage

60

V

Collector to Emitter Voltage

50

V

Emitter to Base Voltage

6

V

Collector Current

5

A

Collector Current (Pulse)

9

A

SOT-89

500

mW

TO-126/TO-251

1

W

TO-252/TO-220

2

W

Collector Dissipation

TO-92

625

mW

Junction Temperature

+150

℃

Storage Temperature

-40 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-to-Base Breakdown Voltage

60

V

Collector-to-Emitter Breakdown Voltage

50

V

Emitter-to-Base Breakdown Voltage

6

V

Collector Cut-Off Current

0.1

mA

Emitter Cut-Off Current

0.1

mA

70

360

DC Current Gain

30

Gain Bandwidth Product

30

MHZ

Output Capacitance

100

pF

Collector-to-Emitter Saturation Voltage

0.4

V

Turn-ON Time

See specified test circuit

0.1

µs

Storage Time

See specified test circuit

1.4

µs

Fall Time

See specified test circuit

0.2

µs

RANK

Q

R

S

RANGE

70-140

100-200

180-360