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Preliminary
4-200
RF2416
Rev A2 010810
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
VDC
Input RF Level
+10
dBm
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Operating Range
Overall Frequency Range
800
1000
MHz
Low Band Operation
1800
2000
MHz
High Band Operation
Supply Voltage (VCC)
2.7
2.8
3.0
V
VCC1 HB, VCC2 HB, VCC1 LB
Power Down Voltage (VBIAS)
2.7
2.8
3.0
V
HB BIAS, LB BIAS
Logic Control Voltage Level
0
3.0
V
HB SELECT, LB SELECT
Operating Ambient Temperature
-40
+85
oC
Input Impedance
50
Ω
Output Impedance
50
Ω
950MHz Performance -
High Gain Mode
T = 25°C, RF = 950MHz,
VCC1LB= VCC2LB = 2.78V, LBSelect= 0V,
ZIN=ZO=50Ω
Gain
14
15.5
17
dB
Gain Variation Over
Temperature Range
+0.5
dB
Gain Variation Over
Frequency Band
+0.5
dB
Noise Figure
1.1
2.0
dB
Reverse Isolation
15
21
dB
Input IP3
+2.0
+5.0
dBm
Input P1dB
-12
-9
dB
Input VSWR
2:1
Output VSWR
2:1
Total Current Draw
4.8
6.0
mA
900MHz LNA ENABLED, 1900MHz LNA
DISABLED. ICC +IPD
950MHz Performance -
Bypass Mode
T = 25°C, RF = 950MHz,
VCC1LB = VCC2LB=2.78V, LBSelect= 2.7V,
ZIN=ZO=50Ω
Gain
-8
-6
-3
dB
Gain Reduction
21.5
dBc
Input IP3
12.0
15.0
dBm
Input P1dB
-1
+2
dB
Input VSWR
2.5:1
Output VSWR
2:1
Total Current Draw
See Application Notes
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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