MP61001 – MP61012

Microsemi

Microwave Products

75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748

Page 2

GaAs PIN DIODES

TM

®

Copyright

 2008

Rev: 2009-05-11

GaAs PIN Diodes (Packaged and Bondable Chips)

Gallium Arsenide PIN Diodes (Specifications @ 25°C)

Part Number

Max.

(pf)

Min.

Breakdown

Voltage

(V)

Max.

Resistance

(

)

Nominal

Switching

Speed

(ns)

Nominal

(ns)

MP61001

0.03

200

3.0

20.0

50

MP61002

0.04

200

3.0

20.0

50

MP61003

0.05

200

3.0

20.0

50

MP61004

0.06

100

2.0

9.0

15

MP61005

0.07

100

2.0

9.0

15

MP61006

0.08

100

2.0

9.0

15

MP61007

0.10

75

2.0

6.0

10

MP61008

0.12

75

2.0

6.0

10

MP61009

0.15

50

1.0

3.5

5

MP61010

0.18

50

1.0

3.5

5

MP61011

0.23

50

0.8

3.5

5

MP61012

0.35

50

0.8

3.5

5

1

Capacitance is specified at 1 MHz.

2

Resistance is specified at 1 GHz.

3

Carrier lifetime is inferred from stored charge measurement at 10 mA.

Note:

GaAs PIN diode chips have a minimum bonding area diameter of 50 microns.

Typical Characteristics