STPS50U100CT datasheet(3/8 Pages) STMICROELECTRONICS

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STPS50U100C

Characteristics

Doc ID 16603 Rev 1

3/8

Figure 1.

Average forward power dissipation

versus average forward current

(per diode)

Figure 2.

Non repetitive surge peak forward

current versus overload duration

(maximum values, per diode)

δ = 0.05 δ = 0.1 δ = 0.2

δ = 0.5

δ = 1

δ = tp /T

IF(AV)(A)

PF(AV)(W)

100

125

150

175

200

225

250

1.E-03

1.E-02

1.E-01

1.E+00

δ = 0.5

IM(A)

t(s)

T = 25 °C

T = 75 °C

T = 125 °C

Figure 3.

Reverse leakage current versus

reverse voltage applied (typical

values, per diode)

Figure 4.

Average forward current versus

ambient temperature

(

δ = 0.5, per diode)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

203040

60708090

100

IR(mA)

Tj = 25 °C

Tj = 50 °C

Tj = 75 °C

Tj = 125 °C

Tj = 150 °C

Tj = 100 °C

VR(V)

100

125

150

δ = tp /T

IF(AV)(A)

Tamb(°C)

Rth(j-a) = Rth(j-c)

Figure 5.

Relative variation of thermal

impedance junction to case versus

pulse duration

Figure 6.

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

Zth(j-c)/Rth(j-c)

tp(s)

Single pulse

100

1000

10000

100

C(pF)

VR(V)

F = 1 MHz

Vosc = 30 mVRMS

Tj = 25 °C

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