BDT82. datasheet(2/3 Pages) COMSET

2 / 3 page

COMSET SEMICONDUCTORS

2/3

PNP BDT82 – BDT84 – BDT86 – BDT88

NPN BDT81 – BDT83 – BDT85 – BDT87

Symbol

Ratings

Value

Unit

BDT82

BDT84

BDT86

Junction Temperature

BDT88

150

°C

BDT82

BDT84

BDT86

TStg

Storage Temperature

BDT88

-65 to +150

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJa

Thermal Resistance, Junction to Ambient

K/W

RthJmb

Thermal Resistance, Junction to Mounting Base

1K/W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx Unit

-IE=0A , -

VCB=60 V

BDT82

-0.2

-IE=0A , -

VCB=80 V

BDT84

-0.2

-IE=0A , -

VCB=100 V

BDT86

-0.2

-ICB0

Collector Cutoff Current

-IE=0A , -

VCB=120 V

BDT88

-0.2

-VBE=0 , -VCE= 60V

BDT82

-1

-VBE=0 , -VCE= 80V

BDT84

-1

-VBE=0 , -VCE= 100V

BDT86

-1

-ICES

Collector Cutoff Current

-VBE=0 , -VCE= 120V

BDT88

-1

BDT82

BDT84

BDT86

-IEBO

Emitter Cutoff Current

-VEB=7.0 V, -IC=0

BDT88

0.1

BDT82

BDT84

BDT86

-IC=50 m A , -VCE=10 V

BDT88

BDT82

BDT84

BDT86

HFE

DC Current Gain (1)

-IC=5 A , -VCE=4.0 V

BDT88

BDT82

BDT84

BDT86

-IC=5 A , -IB=0.5 A

BDT88

BDT82

BDT84

BDT86

-VCE(SAT)

Collector-Emitter

saturation Voltage (1)

-IC=7 A , -IB=0.7 A

BDT88

1.6

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