Dated : 07/12/2002
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
LL103A...LL103C
SILICON SCHOTTKY BARRIER DIODES
for general purpose applications
The LL103A, B, C is a metal on Silicon Schottky barrier
device which is protected by a PN junction guard ring. The
low forward voltage drop and fast switching make it ideal for
protection of MOS devices, steering, biasing and coupling
diodes for fast switching and low logic level applications.
Other uses are for click suppression, efficient full wave
bridges in telephone subsets, and as blocking diodes in
rechargeable low voltage battery systems.
This diode is also available in DO-35 case with type
designation SD103A, B, C.
Absolute Maximum Ratings (Ta = 25
oC)
Symbol
Value
Unit
Peak Reverse Voltage
LL103A
LL103B
LL103C
VRRM
VRRM
VRRM
40
30
20
V
V
V
Power Dissipation (Infinite Heatsink)
Tc = 3/8 from body
Derates at 4 mW/
oC to 0 at 125 oC
Ptot
400
1)
mW
Single Cycle Surge 60Hz sinewave
IFSM
15
A
Junction Temperature
Tj
125
OC
Storage Temperature Range
TS
-55 to +175
OC
1) Valid provided that electrodes are kept at ambient temperature.
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