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2SD600 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # 2SD600
Description  Silicon NPN Power Transistors
Download  4 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD600 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD600 2SD600K
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2SD600
100
V(BR)CEO
Collector-emitter
breakdown voltage
2SD600K
IC=1mA; RBE=∞
120
V
2SD600
100
V(BR)CBO
Collector-base
breakdown voltage
2SD600K
IC=10μA ;IE=0
120
V
V(BR)EBO
Emitter-base breakdown voltage
IE=10μA ;IC=0
5
V
VCEsat
Collector-emitter saturation voltage
IC=0.5A ;IB=50mA
0.4
V
VBEsat
Base-emitter saturation voltage
IC=0.5A ;IB=50mA
1.2
V
ICBO
Collector cut-off current
VCB=50V; IE=0
1
μA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1
μA
hFE-1
DC current gain
IC=50mA ; VCE=5V
60
320
hFE-2
DC current gain
IC=0.5A ; VCE=5V
20
fT
Transition frequency
IC=50mA ; VCE=10V
130
MHz
COB
Collector output capacitance
f=1MHz ; VCB=10V
20
pF
Switching times
tf
Fall time
0.1
μs
toff
Turn-off time
0.5
μs
tstg
Storage time
IC=500mA ; VCE=12V
IB1=-IB2=50mA
0.7
μs
hFE-1 Classifications
D
E
F
60-120
100-200
160-320
2


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