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2SC5130 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5130 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC5130 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 400 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.3A 0.5 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.3A 1.3 V ICBO Collector cut-off current VCB=500V; IE=0 100 μA IEBO Emitter cut-off current VEB=10V; IC=0 10 μA hFE DC current gain IC=1.5A ; VCE=4V 10 30 COB Output capacitance IE=0; VCB=10V;f=1MHz 30 pF fT Transition frequency IC=-0.3A ; VCE=12V 20 MHz Switching times ton Turn-on time 1.0 μs ts Storage time 2.0 μs tf Fall time IC=1.5A; IB1=0.15A IB2=-0.3A VCC=200V ,RL=133Ω 0.3 μs |
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