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2SC4557 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC4557 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC4557 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ 550 V VCEsat Collector-emitter saturation voltage IC=5A;IB=1A 0.5 V VBEsat Base-emitter saturation voltage IC=5A;IB=1A 1.2 V ICBO Collector cut-off current VCB=800V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=5A ; VCE=4V 10 28 fT Transition frequency IE=-1A ; VCE=12V 6 MHz COB Output capacitance VCB=10V;f=1MHz 105 pF Switching times ton Turn-on time 1.0 μs tstg Storage time 5.0 μs tf Fall time IC=5A;IB1=0.75A; IB2=-1.5A; RL=50Ω VCC=250V 0.5 μs |
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