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2SC1929 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1929 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1929 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ;IC=0 6 V VCEsat Collector-emitter saturation voltage IC=500mA; IB=50mA 2.0 V VBEsat Base-emitter on voltage IC=0.1A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=300V; IE=0 10 μA hFE-1 DC current gain IC=0.1A ; VCE=5V 35 330 hFE-2 DC current gain IC=0.3A ; VCE=5V 30 fT Transition frequency IC=0.1A ; VCE=5V 80 MHz hFE-1 Classifications S R Q P 35-70 60-120 100-200 165-330 |
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