| Electronic Components Datasheet Search |
|
2SD1069 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD1069 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1069 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH 150 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1A; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V ICES Collector Cutoff Current VCE= 250V; VBE= 0 1 mA hFE DC Current Gain IC= 5A ; VCE= 1.5V 10 fT Current-Gain—Bandwidth Product IC= 0.2A; VCE= 10V 18 MHz VECF C-E Diode Forward Voltage IF= 6A 1.8 V tf Fall Time ICP= 5A; IB1(end)= 0.5A 1.0 μs isc Website:www.iscsemi.cn |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |