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2SA957 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA957 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA957 2SA958 DESCRIPTION ·With TO-220 package Fig.1 simplified outline (TO-220) and symbol ·High breakdown voltage ·High power dissipation APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA957 -150 VCBO Collector-base voltage 2SA958 Open emitter -200 V 2SA957 -150 VCEO Collector-emitter voltage 2SA958 Open base -200 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -2.0 A IB B Base current -1.0 A PT Total power dissipation TC=25℃ 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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