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BFS520 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BFS520 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 7 page ![]() INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor BFS520 DESCRIPTION ·Low Noise Figure NF = 1.1 dB TYP. @VCE = 6 V, IC = 5 mA, f = 900 MHz ·High Current-Gain—Bandwidth Product fT= 9 GHz TYP. @VCE = 6 V, IC = 20 mA, f = 1 GHz APPLICATIONS ·Designed for wideband applications such as satellite TV tuners,cellular phones, cordless phones,pagers etc, with signal frequencies up to 2 GHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCES Collector-Emitter Voltage RBE= 0 15 V VEBO Emitter-Base Voltage 2.5 V IC Collector Current-Continuous 70 mA PC Collector Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website:www.iscsemi.cn |
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