2SD560 datasheet(1/3 Pages) ISC

Part #	2SD560

Description	isc Silicon NPN Darlington Power Transistor

PDF	3 Pages

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Manufacturer	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD560

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 100V(Min)

·High DC Current Gain

: hFE= 2000(Min) @IC= 3.0A

·Low Saturation Voltage

·Complement to Type 2SB601

APPLICATIONS

·Designed for low frequency power amplifiers and low speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

5

A

ICP

Collector Current-Peak

8

A

IB

B

Base Current-Continuous

0.5

A

Collector Power Dissipation

@ Ta=25℃

1.5

PC

Collector Power Dissipation

@ TC=25℃

30

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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