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TN2535 Datasheet(PDF) 2 Page - Supertex, Inc |
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TN2535 Datasheet(HTML) 2 Page - Supertex, Inc |
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2 / 4 page ![]() 2 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 10V V DD R gen 0V 0V Thermal Characteristics Switching Waveforms and Test Circuit Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR*IDRM @ T A = 25°C °C/W °C/W TO-243AA 283mA 1.6A 1.6W† 15 78† 283mA 1.6A * I D (continuous) is limited by max rated Tj. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. Symbol Parameter Min Typ Max Unit Conditions BV DSS 350 V V GS = 0V, ID = 250µA V GS(th) Gate Threshold Voltage 1.0 2.0 V V GS = VDS, ID= 1mA ∆VGS(th) Change in VGS(th) with Temperature -4.0 mV/°CVGS = VDS, ID= 1mA IGSS Gate Body Leakage 100 nA VGS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1.0 µAVGS = 0V, VDS = Max Rating I D(ON) ON-State Drain Current 0.5 A V GS = 4.5V, VDS = 25V 1.0 V GS = 10V, VDS = 25V RDS(ON) Static Drain-to-Source 15 VGS = 3.0V, ID = 20mA ON-State Resistance 10 Ω VGS = 4.5V, ID = 100mA 10 V GS = 10V, ID = 200mA ∆RDS(ON) Change in R DS(ON) with Temperature 0.75 %/°CVGS = 10V, ID = 200mA GFS Forward Transconductance 125 m VDS = 25V, ID = 100mA CISS Input Capacitance 125 C OSS Common Source Output Capacitance 70 pF CRSS Reverse Transfer Capacitance 25 t d(ON) Turn-ON Delay Time 20 V DD = 25V, tr Rise Time 15 ns ID = 200mA, t d(OFF) Turn-OFF Delay Time 25 R GEN = 25Ω t f Fall Time 20 V SD Diode Forward Voltage Drop 1.8 V V GS = 0V, ISD = 200mA t rr Reverse Recovery Time 300 ns V GS = 0V, ISD = 200mA Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) TN2535 |
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