www.vishay.com

Document Number: 91231

2

S-81271-Rev. A, 16-Jun-08

IRFP450LC, SiHFP450LC

Vishay Siliconix

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

≤ 300 µs; duty cycle ≤ 2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

-40

°C/W

Case-to-Sink, Flat, Greased Surface

0.24

-

Maximum Junction-to-Case (Drain)

-0.65

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

500

-

-

V

ΔV

-

0.59

-

V/°C

Gate-Source Threshold Voltage

2.0

-

4.0

V

Gate-Source Leakage

-

-

± 100

nA

Zero Gate Voltage Drain Current

-

-

25

µA

-

-

250

Drain-Source On-State Resistance

--

0.40

Ω

Forward Transconductance

8.7

-

-

S

Dynamic

Input Capacitance

f = 1.0 MHz, see fig. 5

-

2200

-

pF

Output Capacitance

-

320

-

Reverse Transfer Capacitance

-28

-

Total Gate Charge

--

74

nC

Gate-Source Charge

--

19

Gate-Drain Charge

--

35

Turn-On Delay Time

-14

-

ns

Rise Time

-49

-

Turn-Off Delay Time

-30

-

Fall Time

-30

-

Internal Drain Inductance

Between lead,

6 mm (0.25") from

package and center of

die contact

-5.0

-

nH

Internal Source Inductance

-13

-

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

14

A

--

56

Body Diode Voltage

--

1.4

V

Body Diode Reverse Recovery Time

-

580

870

ns

Body Diode Reverse Recovery Charge

-5.1

7.7

µC

Forward Turn-On Time

D

S

G

S

D

G