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HD6432138SW Datasheet(PDF) 796 Page - Renesas Technology Corp |
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HD6432138SW Datasheet(HTML) 796 Page - Renesas Technology Corp |
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796 / 1061 page ![]() Section 25 Electrical Characteristics Rev. 4.00 Jun 06, 2006 page 742 of 1004 REJ09B0301-0400 3. IRQ2 includes the ADTRG signal multiplexed on that pin. 4. P52/SCK0/SCL0 and P97/SDA0 are NMOS push-pull outputs in H8S/2138. An external pull-up resistor is necessary to provide high-level output from SCL0 and SDA0 (ICE = 1). P52/SCK0 and P97 (ICE = 0) high levels are driven by NMOS in H8S/2138. 5. When ICE = 0. Low-level output when the bus drive function is selected is determined separately. 6. The upper limit of the port 6 applied voltage is V CC +0.3 V when CIN input is not selected, and the lower of V CC +0.3 V and AVCC +0.3 V when CIN input is selected. When a pin is in output mode, the output voltage is equivalent to the applied voltage. 7. For flash memory program/erase operations, the applicable ranges are V CC = 3.0 V to 3.6 V. 8. Current dissipation values are for V IH min = VCC –0.2 V and VIL max = 0.2 V with all output pins unloaded and the on-chip pull-up MOSs in the off state. 9. The values are for V RAM ≤ VCC < 2.7 V, VIH min = VCC –0.2 V, and VIL max = 0.2 V. |
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