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HD6432138SW Datasheet(PDF) 671 Page - Renesas Technology Corp |
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HD6432138SW Datasheet(HTML) 671 Page - Renesas Technology Corp |
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671 / 1061 page  Section 21 ROM (Mask ROM Version, H8S/2138 F-ZTAT, H8S/2134 F-ZTAT, and H8S/2132 F-ZTAT) Rev. 4.00 Jun 06, 2006 page 617 of 1004 REJ09B0301-0400 21.10.6 Auto-Erase Mode AC Characteristics Table 21.17 AC Characteristics in Auto-Erase Mode Conditions: V CC = 5.0 V ±10%, VSS = 0 V, Ta = 25°C ±5°C Item Symbol Min Max Unit Command write cycle t nxtc 20 — µs CE hold time t ceh 0 — ns CE setup time t ces 0 — ns Data hold time t dh 50 — ns Data setup time t ds 50 — ns Write pulse width t wep 70 — ns Status polling start time t ests 1 — ms Status polling access time t spa — 150 ns Memory erase time t erase 100 40000 ms WE rise time t r — 30 ns WE fall time t f — 30 ns CE FA17 to FA0 FO7 to FO0 FO6 FO7 OE WE tests tnxtc tnxtc tces tceh tdh CLin DLin twep FO5 to FO0 = 0 H'20 H'20 Erase normal end confirmation signal tf tr tds tspa terase (100 to 40000 ms) Erase end identification signal Figure 21.21 Auto-Erase Mode Timing Waveforms |
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