STTA212S datasheet(3/8 Pages) STMICROELECTRONICS

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0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

P1(W)

δ=0.1

δ=0.2

δ=0.5

δ=1

IF(av) (A)

Fig. 1: Conduction losses versus average current.

1E-2

1E-1

1E+0

1E+1

5E+1

IFM(A)

Tj=125

°C

VFM(V)

Fig. 2: Forward voltage drop versus forward

current (maximum values).

1E-1

1E+0

1E+1

1E+2

tp(s)

Zth(j-a)(

°C/W)

1E-2

5E+2

100

Fig. 3: Variation of thermal impedance junction to

ambient versus pulse duration (epoxy printed cir-

cuit board FR4, e(Cu)=35

µm, S(Cu)=1cm2).

100

120

140

160

180

200

0.60

0.80

1.00

1.20

S factor

VR=600V

Tj=125

°C

IF<2*IF(av)

dIF/dt(A/

µs)

Fig. 5: Softness factor (tb/ta) versus dIF/dt (typical

values).

100

120

140

160

180

200

100

150

200

250

300

350

400

trr(ns)

VR=600V

Tj=125

°C

IF=2*IF(av)

IF=IF(av)

dIF/dt(A/

µs)

Fig. 6: Reverse recovery time versus dIF/dt (90%

confidence).

100

120

140

160

180

200

IRM(A)

VR=600V

Tj=125

°C

IF=2*IF(av)

IF=IF(av)

dIF/dt(A/

µs)

Fig. 4: Peak reverse recovery current versus dIF/dt

(90% confidence).

STTA212S

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