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STS4DPFS30L Datasheet(PDF) 2 Page - STMicroelectronics

Part # STS4DPFS30L
Description  P-CHANNEL 30V - 0.07ohm - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
PDF  8 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS4DPFS30L Datasheet(HTML) 2 Page - STMicroelectronics

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STS4DPFS30L
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THERMAL DATA
MOSFET ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-amb
(*)Thermal Resistance Junction-ambient MOSFET
85
°C/W
Rthj-amb
(*)Thermal Resistance Junction-ambient SCHOTTKY
100
°C/W
Tstg
Storage Temperature Range
-55 to 150
°C
Tl
Junction Temperature
150
°C
(*) Mounted on FR-4 board (Steady State)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
20
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
1µA
VDS = Max Rating, TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
1
1.6
2.5
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 2 A
0.07
0.08
Ω
VGS = 4.5V, ID = 2 A
0.08
0.095
ID(on)
On State Drain Current
VDS > ID(on) x RDS(on)max,
VGS =10V
16
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID =2 A
5S
Ciss
Input Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
1350
pF
Coss
Output Capacitance
490
pF
Crss
Reverse Transfer
Capacitance
130
pF



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