STPS30L40CW datasheet(3/6 Pages) STMICROELECTRONICS

3 / 6 page

1E-3

1E-2

1E-1

1E+0

100

120

140

160

180

200

IM(A)

Tc=25

°C

Tc=125

°C

Tc=75

°C

t(s)

δ=0.5

Fig. 3: Non repetitive surge peak forward current

versus overload duration (maximum values) (per

diode).

1.0E-4

1.0E-3

1.0E-2

1.0E-1

1.0E+0

0.0

0.2

0.4

0.6

0.8

1.0

Zth(j-c)/Rth(j-c)

Single pulse

δ = 0.1

δ = 0.2

δ = 0.5

δ=tp/T

tp(s)

Fig. 4: Relative variation of thermal transient

impedance junction to case versus pulse duration.

1E-2

1E-1

1E+0

1E+1

1E+2

2E+2

IR(mA)

Tj=100

°C

Tj=75

°C

Tj=25

°C

Tj=150

°C

VR(V)

Fig. 5: Reverse leakage current versus reverse

voltage applied (typical values) (per diode).

100

200

500

1000

2000

F=1MHz

Tj=25

°C

C(pF)

VR(V)

Fig. 6: Junction capacitance versus reverse

voltage applied (typical values) (per diode).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

200

IFM(A)

VFM(V)

Typical values

Tj=150

°C

Tj=125

°C

Tj=25

°C

Fig. 7: Forward voltage drop versus forward

current (maximum values) (per diode).

Rth(j-a) (

°C/W)

S(Cu) (cm )

Fig. 8: Thermal resistance junction to ambient

versus copper surface under tab (Epoxy printed

circuit board FR4, copper thickness: 35

µm)

(STPS30L40CGonly).

STPS30L40CG/CT/CW

3/6

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