BCY59_02 datasheet(2/6 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

150

384.6

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 45 V

TC = 150

0.1

µA

ICEX

Collector Cut-off

Current (VBE = -0.2 V)

VCE = 45 V

TC = 100

oC20

µA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

V(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(IB = 0)

IC = 2 mA

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 10

µA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 10 mA

IB = 0.25 mA

IC = 100 mA

IB = 2.5 mA

0.12

0.4

0.35

0.7

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 10 mA

IB = 0.25 mA

IC = 100 mA

IB = 2.5 mA

0.6

0.75

0.7

0.9

0.85

1.2

VBE(on)

∗ Base-Emitter (on)

Voltage

IC = 2 mA

VCE = 5 V

IC = 100 mA

VCE = 1 V

0.55

0.65

0.75

0.7

hFE

∗

DC Current Gain

IC = 10

µA

VCE = 5 V

Gr. VIII

Gr. IX

Gr. X

IC = 2 mA

VCE = 5 V

Gr. VIII

Gr. IX

Gr. X

IC = 10 mA

VCE = 1 V

Gr. VIII

Gr. IX

Gr. X

IC = 100 mA

VCE = 1 V

Gr. VIII

Gr. IX

Gr. X

100

180

250

380

120

160

240

140

195

280

250

350

500

260

365

520

310

460

630

hfe

∗

Small Signal Current

Gain

IC = 2 mA

VCE = 5 V f = 1 KHz

Gr. VIII

Gr. IX

Gr. X

175

250

350

500

700

Transition Frequency

IC = 10 mA

VCE = 5 V f = 100 MHz

200

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1 %

BCY59

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