STPS2030 datasheet(3/6 Pages) STMICROELECTRONICS

3 / 6 page

STPS2030CT/CG/CR

3/6

Z/R

th(j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

δ=tp/T

t (s)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

I (mA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

V (V)

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values).

C(nF)

0.1

1.0

10.0

100

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values).

I (A)

100

125

150

175

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.5

t(s)

T =25°C

T =75°C

T =125°C

Fig. 5: Non repetitive surge peak forward

current versus overload duration (maximum

values).

(A)

100

0.0

0.2

0.4

0.6

0.8

1.0

1.2

T =25°C

(maximum values)

T =125°C

(maximum values)

T =125°C

(typical values)

(V)

Fig. 9: Forward voltage drop versus forward

current.

(°C/W)

th(j-a)

S(Cu)(cm²)

Fig. 10: Thermal resistance junction to ambient

versus copper surface under tab (epoxy printed

board FR4, Cu = 35µm).

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