P9NB50FP datasheet(2/9 Pages) STMICROELECTRONICS

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STP9NB50/FP

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THERMAL DATA

AVALANCHE CHARACTERISTICS

ELECTRICAL CHARACTERISTICS (TCASE = 25

°C UNLESS OTHERWISE SPECIFIED)

OFF

ON (1)

DYNAMIC

TO-220

TO-220FP

Rthj-case

Thermal Resistance Junction-case Max

3.13

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

°C/W

Rthc-sink

Thermal Resistance Case-sink Typ

0.5

°C/W

Maximum Lead Temperature For Soldering Purpose

300

°C

Symbol

Parameter

Max Value

Unit

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max)

8.6

EAS

Single Pulse Avalanche Energy

(starting Tj =25 °C, ID =IAR,VDD =50 V)

520

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS =0

500

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

µA

VDS = Max Rating, TC = 125 °C

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ±30V

±100

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 250 µA

45V

RDS(on)

Static Drain-source On

Resistance

VGS = 10V, ID = 4.3 A

0.75

0.85

Ω

ID(on)

On State Drain Current

VDS >ID(on) xRDS(on)max,

VGS =10V

8.6

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS >ID(on) xRDS(on)max,

ID = 4.3 A

5.7

Ciss

Input Capacitance

VDS = 25V, f = 1 MHz, VGS =0

1250

Coss

Output Capacitance

175

Crss

Reverse Transfer

Capacitance

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