STTH3L06B datasheet(3/10 Pages) STMICROELECTRONICS

3 / 10 page

STTH3L06

3/10

Figure 1: Conduction losses versus average

current

Figure 2: Forward voltage drop versus forward

current

Figure 3: Relative variation of thermal impedance

junction ambient versus pulse duration (epoxy

printed circuit FR4, Lleads = 10mm, SCU=1cm

Figure 4: Peak reverse recovery current

versus dIF/dt (typical values)

Figure 5: Reverse recovery time versus dIF/dt

(typical values)

Figure 6: Reverse recovery charges versus dIF/

dt (typical values)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

P(W)

δ=tp/T

δ = 0.05

δ = 1

δ = 0.5

δ = 0.2

δ = 0.1

(A)

F(AV)

0.1

1.0

10.0

100.0

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

(A)

(V)

T =150°C

(typical values)

T =25°C

(maximum values)

T =150°C

(maximum values)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z/R

th(j-a)

t (s)

Single pulse

SMC

= 1cm

DO-201AD

= 10mm

leads

SMB

= 1cm

DPAK

= 1cm

100

150

200

250

300

350

400

450

500

(A)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

FF(AV)

I =0.5 x I

F(AV)

I =0.25 x I

FF(AV)

V =400V

T =125°C

100

200

300

400

500

600

700

100

120

140

160

180

200

t (ns)

dI /dt(A/µs)

I =2 x I

F(AV)

I=I

F(AV)

I =0.5 x I

F(AV)

V =400V

T =125°C

100

150

200

250

300

350

400

450

500

100

120

140

160

180

200

Q (nC)

I =2 x I

FF(AV)

I =0.5 x I

FF(AV)

dI /dt(A/µs)

I=I

FF(AV)

V =400V

T =125°C

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