STTH3L06RL datasheet(4/10 Pages) STMICROELECTRONICS

4 / 10 page

STTH3L06

4/10

Figure 7: Softness factor versus dIF/dt (typical

values)

Figure 8: Relative variations of dynamic

parameters versus junction temperature

Figure 9: Transient peak forward voltage

versus dIF/dt (typical values)

Figure 10: Forward recovery time versus dIF/dt

(typical values)

Figure

11:

Junction

capacitance

versus

reverse voltage applied (typical values)

Figure 12: Thermal resistance junction to

ambient versus copper surface under lead

(epoxy FR4, eCU=35µm) (DO-201AD)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

120

140

160

180

200

S factor

dI /dt(A/µs)

I=I

T =125°C

F(AV)

V =400V

0.00

0.25

0.50

0.75

1.00

1.25

100

125

IRM

QRR

S factor

T (°C)

I=I

Reference: T =125°C

FF(AV)

V =400V

(V)

100

120

140

160

180

200

dI /dt(A/µs)

I=I

T =125°C

F(AV)

100

120

140

160

180

200

100

120

140

160

180

200

t (ns)

dI /dt(A/µs)

I=I

T =125°C

F(AV)

=1.1 x V max.

100

1000

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

(°C/W)

th(j-a)

DO-201AD

(cm²)

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