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STTH2003CG Datasheet(PDF) 5 Page - STMicroelectronics |
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STTH2003CG Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 11 page ![]() STTH2003C Characteristics 5/11 Figure 7. Softness factor (tb/ta) versus dIF/dt (typical values, per diode) Figure 8. Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125°C) 0 50 100 150 200 250 300 350 400 450 500 0.00 0.10 0.20 0.30 0.40 0.50 0.60 S factor dI /dt(A/µs) F V =200V T =125°C R j 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 T (°C) j S factor IRM Figure 9. Transient peak forward voltage versus dIF/dt (90% confidence, per diode) (TO-220AB) Figure 10. Forward recovery time versus dIF/dt (90% confidence, per diode) Figure 11. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (D2PAK). 0 50 100 150 200 250 300 350 400 450 500 0 2 4 6 8 10 V (V) FP dI /dt(A/µs) F I=I T =125°C F F(AV) j 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 t (ns) fr dI /dt(A/µs) F I=I T =125°C F F(AV) j V =1.1 x V max. FR F 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 S(Cu)(cm²) R (°C/W) th(j-a) |
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