STBV45 datasheet(2/8 Pages) STMICROELECTRONICS

Part #	STBV45

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	8 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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Table 3: Thermal Data

Rthj-amb

Thermal Resistance Junction-ambient

Max

131.6

oC/W

Table 4: Electrical Characteristics (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICEV

Collector Cut-off

Current (VBE = -1.5V)

VCE = 700 V

250

µA

IEBO

Emitter Cut-off

Current (IC = 0)

VEB = 9 V

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 1 mA

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.2 A

IB = 40 mA

IC = 0.3 A

IB = 75 mA

IC = 0.4 A

IB = 135 mA

0.2

0.3

0.4

0.5

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.2 A

IB = 40 mA

IC = 0.3 A

IB = 75 mA

1.2

hFE

∗

DC Current Gain

IC = 0.2 A

VCE = 5 V

IC = 0.4 A

VCE = 5 V

INDUCTIVE LOAD

Fall Time

IC = 0.2 A

Vclamp = 300 V

IB1 = -IB2 = 40 mA

L = 3 mH

(see figure 7)

0.3

µs

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %

STBV45

2/8

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