STB5NK50Z datasheet(3/14 Pages) STMICROELECTRONICS

Part #	STB5NK50Z

Description	N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK/I2PAK Zener-Protected SuperMESH?줡ower MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STP5NK50Z - STP5NK50ZFP - STD5NK50Z - STD5NK50Z-1 - STB5NK50Z-1

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

ON/OFF

DYNAMIC

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80%

VDSS.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =1 mA, VGS = 0

500

V

IDSS

Zero Gate Voltage

Drain Current (VGS =0)

VDS = Max Rating

VDS = Max Rating, TC = 125 °C

1

50

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS = ± 20V

±10

µA

VGS(th)

Gate Threshold Voltage

VDS =VGS,ID = 50µA

3

3.75

4.5

V

RDS(on)

Static Drain-source On

Resistance

VGS =10V, ID = 2.2 A

1.22

1.5

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (1)

Forward Transconductance

VDS =15 V, ID = 2.2 A

3.1

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V,f= 1MHz,VGS = 0

535

75

17

pF

Coss eq. (3)

Equivalent Output

Capacitance

VGS =0V, VDS = 0V to 400V

45

pF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

Turn-on Delay Time

Rise Time

VDD =250 V, ID = 2.2 A

RG = 4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

15

10

ns

Qg

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD =400V, ID = 4.4 A,

VGS =10V

20

4

10

28

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(off)

tf

Turn-off Delay Time

Fall Time

VDD = 250 V, ID = 2.2A

RG =4.7Ω VGS =10 V

(Resistive Load see, Figure 3)

32

15

ns

tr(Voff)

tf

tc

Off-voltage Rise Time

Fall Time

Cross-over Time

VDD = 400V, ID = 4.4A,

RG =4.7Ω, VGS = 10V

(Inductive Load see, Figure 5)

12

20

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

ISDM (2)

Source-drain Current

Source-drain Current (pulsed)

4.4

17.6

A

VSD (1)

Forward On Voltage

ISD = 4.4 A, VGS =0

1.6

V

trr

Qrr

IRRM

Reverse Recovery Time

Reverse Recovery Charge

Reverse Recovery Current

ISD =4.4 A, di/dt = 100A/µs

VDD =30V, Tj = 150°C

(see test circuit, Figure 5)

310

1425

9.2

ns

nC

A

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