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STP55NF06 Datasheet(PDF) 3 Page - STMicroelectronics |
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STP55NF06 Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 12 page 3/12 STB50NF06 STB55NF06-1 STP55NF06 STP55NF06FP SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE (*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. ( •)Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 30 V ID = 27.5 A RG = 4.7 Ω VGS = 10 V (Resistive Load, Figure 3) 16 8 ns ns Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD= 48 V ID= 55 A VGS= 10V 44.5 10.5 17.5 60 nC nC nC Symbol Parameter Test Conditions Min. Typ. Max. Unit td(off) tf Turn-off Delay Time Fall Time VDD = 30V ID = 27.5 A RG = 4.7Ω, VGS = 10 V (Resistive Load, Figure 3) 36 15 ns ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) 50 200 A A VSD (*) Forward On Voltage ISD = 55A VGS = 0 1.5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 55 A di/dt = 100A/µs VDD = 30 V Tj = 150°C (see test circuit, Figure 5) 75 170 4.5 ns nC A ELECTRICAL CHARACTERISTICS (continued) Safe Operating Area for TO-220FP Safe Operating Area for |
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