PD57006 datasheet(1/14 Pages) STMICROELECTRONICS

Part #	PD57006

Description	RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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March, 21 2003

PD57006

PD57006S

RF POWER TRANSISTORS

The LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 6 W with 15 dB gain @ 945 MHz / 28V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD57006 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 28 V in common source mode at frequencies of

up to 1 GHz. PD57006 boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS tech-

nology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. PD57006’s su-

perior linearity performance makes it an ideal so-

lution for car mobile radio.

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

PowerSO-10RF

(formed lead)

ORDER CODE

PD57006

BRANDING

PD57006

PowerSO-10RF

(straight lead)

ORDER CODE

PD57006S

BRANDING

PD57006S

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

± 20

V

ID

Drain Current

1

A

PDISS

Power Dissipation (@ Tc = 70°C)

20

W

Tj

Max. Operating Junction Temperature

165

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

5

°C/W

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

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