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2DB1184Q Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2DB1184Q Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc Silicon PNP Transistor 2DB1184Q www.iscsemi.com 1 FEATURES · BVCEO > -50V · IC = -3A High Continuous Collector Current · Low Collector-Emitter Saturation Voltage APPLICATIONS · Switching regulators · Motor drive circuits · Medium‑ power switching circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter peak Voltage -50 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Peak Pulse Current -4.5 A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ |
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Similar Description - 2DB1184Q |
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