MJD50 datasheet(2/6 Pages) STMICROELECTRONICS

Part #	MJD50

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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2 / 6 page

THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resist ance Junction-case

Max

Thermal Resist ance Junction-ambient

Max

8.33

100

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICES

Collector Cut -of f

Current (VBE =0)

VCE =500 V

0.1

ICEO

Collector Cut -of f

Current (IB =0)

VCE =300 V

0.1

IEBO

Emitt er Cut -off Current

(IC =0)

VEB =5 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 30 mA

400

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =1 A

IB =0.2 A

VBE(on)

∗ Base-Emitter On

Voltage

IC =1 A

VCE =10 V

1.5

hFE

∗

DC Current G ain

IC =0. 3 A

VCE =10 V

IC =1 A

VCE =10 V

150

Transit ion Frequency

IC =0. 2 A

VCE = 10 V

f =2MHz

MHz

hfe

Small Signal Current

Gain

IC =0.2 A

VCE = 10 V

f =1kHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Derating Curves

MJD50

2/6

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