MJ2501 datasheet(2/4 Pages) STMICROELECTRONICS

Part #	MJ2501

Description	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

1.17

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICER

Collector Cut-off

Current (RBE = 1 K

Ω)

VCE = 80 V

T case = 150

oC

VCE = 80 V

1

5

mA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 30 V

VCE = 40 V

1

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

2mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 mA

80

V

VCE(sat)

∗ Collector-emitter

Saturation Voltage

IC = 5 A

IB = 20 mA

IC = 10 A

IB = 50 mA

2

4

V

VBE

∗

Base-emitter Voltage

IC = 5 A

VCE = 3 V

3

V

hFE

∗

DC Current Gain

IC = 5 A

VCE = 3 V

1000

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

For PNP types voltage and current values are negative.

MJ2501 / MJ3001

2/4

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