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IRF540N Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

Part # IRF540N
Description  isc N-Channel MOSFET Transistor
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF540N Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  IRF540N Datasheet HTML 1Page - Inchange Semiconductor Company Limited IRF540N Datasheet HTML 2Page - Inchange Semiconductor Company Limited IRF540N Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc N-Channel MOSFET Transistor
IRF540N
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBO
L
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID =250μA
100
--
--
V
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID =250μA
2.0
--
4.0
V
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=16A
--
--
0.044
Ω
IGSS
Gate-Source Leakage Current
VGS= ±20V
--
--
±0.1
uA
IDSS
Drain-Source Leakage Current
VDS=100V; VGS= 0V
--
--
25
uA
VSD
Diode forward voltage
IS=16A, VGS = 0V
--
--
1.2
V
Ciss
Input Capacitance
VGS=0V,VDS=25V,f=1MHz
--
1331
--
pF
Coss
Output Capacitance
--
276
--
Crss
Reverse Transfer Capacitance
--
88
--
Qg
Total Gate Charge
VDD=80V,ID=30A,VGS=10V
--
53
--
nC
Qgs
Gate-Source Charge
--
6
--
Qgd
Gate-Drain Charge
--
29
--
td(on)
Turn-on Delay Time
VDD=50V,ID=30A,RG=25Ω
--
39
--
ns
tr
Turn-on Rise Time
--
45
--
td(off)
Turn-off Delay Time
--
207
--
tf
Turn-off Fall Time
--
64
--



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