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PRELIMINARY DATA

March 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M29F160BT

M29F160BB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block)

Single Supply Flash Memory

s

SINGLE 5V±10% SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

s

ACCESS TIME: 55ns

s

PROGRAMMING TIME

– 8µs per Byte/Word typical

s

35 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

s

PROGRAM/ERASE CONTROLLER

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

s

ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

s

UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

s

TEMPORARY BLOCK UNPROTECTION

MODE

s

LOW POWER CONSUMPTION

– Standby and Automatic Standby

s

100,000 PROGRAM/ERASE CYCLES per

BLOCK

s

20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

s

ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29F160BT: 22CCh

– Bottom Device Code M29F160BB: 224Bh

TSOP48 (N)

12 x 20mm

Figure 1. Logic Diagram

AI02920

20

A0-A19

W

DQ0-DQ14

VCC

M29F160BT

M29F160BB

E

VSS

15

G

RP

DQ15A–1

BYTE

RB