AP80P02DF datasheet(1/7 Pages) APME

Part #	AP80P02DF

Description	-20V P-Channel Enhancement Mode MOSFET

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Manufacturer	APME [A POWER MICROELECTRONICS]

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AP80P02DF

-20V P-Channel Enhancement Mode MOSFET

AP80P02DF REV1.1

永源微電子科技有限公司

Description

The AP80P02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = -20V ID =-80A

RDS(ON) < 5.5mΩ @ VGS=4.5V (Type：4.0mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80P02DF

PDFN3*3-8L

AP80P02DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25

℃

Continuous Drain Current, VGS @ -4.5V1

-80

A

ID@TC=70

℃

Continuous Drain Current, VGS @ -4.5V1

-44

A

IDM

Pulsed Drain Current2

-300

A

EAS

Single Pulse Avalanche Energy

180

mJ

PD@TC=25

℃

Total Power Dissipation3

43.1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance Junction-Case1

2.9

℃/W

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AP80P02DF Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

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