PU2BM

– PU2DM

Taiwan Semiconductor

2

Version: B2103

THERMAL PERFORMANCE

PARAMETER

SYMBOL

TYP

UNIT

Junction-to-lead thermal resistance

RӨJL

28

°C/W

Junction-to-ambient thermal resistance

RӨJA

60

°C/W

Junction-to-case thermal resistance

RӨJC

34

°C/W

Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board)

ELECTRICAL SPECIFICATIONS (T

A = 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

Forward voltage

(1)

IF = 1A, TJ = 25°C

VF

0.90

-

V

IF = 2A, TJ = 25°C

0.99

1.05

V

IF = 1A, TJ = 125°C

0.76

-

V

IF = 2A, TJ = 125°C

0.84

0.90

V

Reverse current @ rated VR

(2)

TJ = 25°C

IR

-

1

µA

TJ = 125°C

-

15

µA

Reverse recovery time

IF = 0.5A, IR = 1.0A, Irr = 0.25A

trr

-

25

ns

IF = 1.0A, di/dt = 50 A/µs, VR = 30V

36

-

ns

Reverse recovery current

IF = 2.0A, di/dt = 200 A/µs,

VR = 100V

IRM

3.8

-

A

Reverse recovery charge

Qrr

57

-

nC

Reverse recovery time

trr

28

-

ns

Junction capacitance

1MHz, VR = 4.0V

CJ

18

-

pF

Notes:

1.

Pulse test with PW = 0.3ms

2.

Pulse test with PW = 30ms

ORDERING INFORMATION

ORDERING CODE(1)

PACKAGE

PACKING

PU2xM

Micro SMA

12,000 / Tape & reel

Notes:

1.

“x” defines voltage from 100V(PU2BM) to 200V(PU2DM)