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AP28N50LP Datasheet(PDF) 1 Page - A POWER MICROELECTRONICS

Part # AP28N50LP
Description  500V N-Channel Enhancement Mode MOSFET
PDF  7 Pages
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Manufacturer  APME [A POWER MICROELECTRONICS]
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AP28N50LP Datasheet(HTML) 1 Page - A POWER MICROELECTRONICS

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AP28N50LP
500V N-Channel Enhancement Mode MOSFET
AP28N50LP REV1.0
永源微電子科技有限公司
Description
The AP28N50LP is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency.
General Features
VDS=500V ID=24A
RDS(ON) < 200mΩ @ VGS=10V （Type：170mΩ）
Application
Uninterruptible Power Supply(UPS)
Power Factor Correction (PFC)
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP28N50LP
TO-247S-3L
AP28N50LP XXX YYYY
360
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Value
Unit
VDSS
Drain-Source Voltage (VGS = 0V)
500
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
28
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
18
A
IDM
Pulsed Drain Current
(note1)
130
A
VGS
Gate-Source Voltage
±30
V
EAS
Single Pulse Avalanche Energy
985
mJ
IAS
Avalanche Current
20
A
PD
Power Dissipation (TC = 25ºC)
340
W
TJ, Tstg
Operating Junction and Storage Temperature Range
-55~+150
ºC
RthJC
Thermal Resistance, Junction-to-Case
0.4
ºC/W
RthJA
Thermal Resistance, Junction-to-Ambient
45
ºC/W


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