LET9130 datasheet(1/6 Pages) STMICROELECTRONICS

Part #	LET9130

Description	RF POWER TRANSISTORS Ldmos Enhanced Technology

PDF	6 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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PRELIMINARY DATA

February, 6 2003

LET9130

RF POWER TRANSISTORS

Ldmos Enhanced Technology

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• IS-95 CDMA: 865-895 MHz / 28 V

POUT = 25 W

EFF. = 29 %

• EDGE: 920-960 MHz / 28 V

POUT = 45 W

EFF. = 38 %

• GSM: 920-960 MHz / 28 V

POUT = 135 W

EFF. = 51 %

• EXCELLENT THERMAL STABILITY

• BeO FREE PACKAGE

• INTERNAL INPUT MATCHING

• ESD PROTECTION

DESCRIPTION

The LET9130 is a common

source N-Channel

enhancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1.0

GHz. The LET9130 is designed for high gain and

broadband performance operating in common

source mode at 28 V. Its internal matching makes

it ideal for base station applications requiring high

linearity.

PIN CONNECTION

1. Drain

2. Source

3. Gate

1

2

3

M265

epoxy sealed

ORDER CODE

LET9130

BRANDING

LET9130

ABSOLUTE MAXIMUM RATINGS (TCASE = 25

°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

-0.5 to +15

V

ID

Drain Current

15

A

PDISS

Power Dissipation (@ Tc = 70 °C)

217

W

Tj

Max. Operating Junction Temperature

200

°C

TSTG

Storage Temperature

-65 to +200

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

0.6

°C/W

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