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BAS40 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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BAS40 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 3 page ![]() BL Galaxy Electrical Production specification Surface mount schottky barrier diode BAS40/-04/-05/-06 Document number: BL/SSSKC029 www.galaxycn.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Characteristic Symbol Min Typ MAX UNIT Test Condition Reverse Breakdown Voltage V(BR)R 40 - - V IRS= 10μA Forward Voltage VF - - 380 1000 mV tP<300μs,IF=1.0mA tP<300μs,IF=40mA Reverse Leakage Current IR - 20 200 nA tP<300μs,VR=30V Junction Capacitance Cj - 4.0 5.0 pF VR=0V,f=1.0MHz Reverse Recovery Time trr - - 5.0 ns IF=IR=10mA to IR=1.0mA,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified |
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