IRFZ40 datasheet(2/9 Pages) STMICROELECTRONICS

Part #	IRFZ40

Description	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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THERMAL DATA

TO-220

ISOWATT220

Rthj-case

Thermal Resist ance Junct ion-case

Max

1

3. 33

oC/W

Rthj-amb

R th c-s

Tl

Thermal Resist ance Junct ion-ambient

Max

Thermal Resist ance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

62.5

0.5

300

oC/W

oC

AVALANCHE CHARACTERISTICS

Symbol

Parameter

Max Value

Uni t

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max,

δ <1%)

50

A

EAS

Single Pulse Avalanche Energy

(st arting Tj =25

oC, ID =IAR,VDD =25 V)

400

mJ

EAR

Repet itive Avalanche Energy

(pulse width limited by Tj max,

δ <1%)

100

mJ

IAR

Avalanche Current, Repetitive or Not-Repetitive

(T c = 100

oC, pulse width limited by Tj max,

δ <1%)

35

A

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID =250

µAVGS =0

50

V

IDS S

Zero Gate Volt age

Drain Current (VGS =0)

VDS =Max Rating

VDS = Max Rating x 0.8

Tc =125

oC

250

1000

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

nA

ON (

∗)

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage VDS =VGS

ID =250

µA2

2.9

4

V

RDS(on)

St atic Drain-source On

Resist ance

VGS =10V

ID = 29 A

0. 022

0.028

Ω

ID(on)

On St ate Drain Current

VDS >ID(on) xRDS(on)max

VGS =10 V

50

A

DYNAMIC

Symbol

Parameter

Test Condi tions

Mi n.

Typ.

Max.

Unit

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRD S(on)max

ID =29 A

17

22

S

Ciss

Coss

Crss

I nput Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

1700

630

200

2200

850

260

pF

IRFZ40/FI

2/9

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