IRFP460 datasheet(1/8 Pages) STMICROELECTRONICS

Part #	IRFP460

Description	N - CHANNEL 500V - 0.22 ohm - 20 A - TO-247 PowerMESH] MOSFET

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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IRFP460

N - CHANNEL 500V - 0.22

Ω - 20 A - TO-247

PowerMESH

™ MOSFET

s

TYPICAL RDS(on) = 0.22

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

GATE CHARGE MINIMIZED

DESCRIPTION

This power MOSFET is designed using the

company’s consolidated strip layout-based MESH

OVERLAY

™ process. This technology matches

and improves the performances compared with

standard parts from various sources.

APPLICATIONS

s

HIGH CURRENT SWITCHING

s

UNINTERRUPTIBLE POWER SUPPLY (UPS)

s

DC/DC COVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT.

®

INTERNAL SCHEMATIC DIAGRAM

September 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Un it

VDS

Drain-source Voltage (VGS =0)

500

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

500

V

VGS

G ate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC20

A

ID

Drain Current (continuous) at Tc =100

oC13

A

IDM (

•)

Drain Current (pulsed)

80

A

Ptot

T otal Dissipation at Tc =25

oC250

W

Derating Factor

2

W /

o C

dv/dt (1)

Peak Diode Recovery volt age slope

3.5

V/ns

Tstg

Storage Temperat ure

-65 to 150

o C

Tj

Max. Operating Junction Temperature

150

o C

(

•) Pulse width limited by safe operating area

( 1)ISD

≤20 Α, di/dt ≤ 160 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

IRFP460

500 V

< 0. 27

Ω

20 A

1

2

3

TO-247

1/8

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